Staff Researcher - Selective Area Deposition By Atomic Layer Deposition For Microelectronics

.Staff Researcher - Selective area deposition by atomic layer deposition for microelectronics Job Reference: Ref.04.24.23 /1 Employer: International Iberian Nanotechnology Laboratory (INL) Location: Braga, Portugal Group/Unit: Salomé Research Group Number of Vacancies: 1 Employment Type: Full time Contract Duration: 36 months Open Date for Applications: August 22 nd, 2024 Closing Date for Applications : September 22 nd, 2024, 23h00m (Lisbon Time) Key words: # Atomic LayerDeposition ( ALD) # SelectiveAreaDeposition (SAD) # surface characteri sation #nanofabrication Overview The Salomé R esearch Group is dedicated to developing nanofabrication and applications for optoelectronics and energy. Focused on developing nanofabrication solutions for a diverse set of applications, via several mechanisms such as competitive funding p rojects and industrial services. T he group aims to keep advancing the state-of-the-art in several areas. We are looking for a qualified Researcher to join our team in developing area selective deposition (SAD) based on atomic layer deposition (ALD) process es. We will develop work in collaboration with a multinational semiconductor company with the aim of developing clean room nanofabrication processes compatible with the mid-term industry needs in the area of microelectronics. The three-year project consists of the procurement and installation of a ALD tool tailored for SAD and the development of nanometre scale process es that are compatible with advanced micro-electronics high end fabrication. T his project will place the researcher and INL in a unique position worldwide allowing for the developed processes to be implemented by the industrial partner in several applications. Job Duties T he job duties will be the following : Experimental Design and Execution: Develop experimental strategies and protocols for selective area deposition using ALD, considering parameters such as substrate material, surface preparation, precursor ch oice, and deposition conditions; Execute experiments meticulously, ensuring reproducibility and accuracy in results. Process Optimis ation: Optimis e ALD processes for selective area deposition, aiming for precise control over film thickness, uniformity, an d conformity on targeted areas; Explore parameter space systematically, employing techniques such as Design of Experiments (DOE) to identify optimal process conditions. Characteri s ation and Analysis : P erform comprehensive characteris ation of deposited films using techniques such as ellipsometry, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scan ning electron microscopy (SEM); Analyse data to assess film quality, uniformity, adhesion, and other relevant properties