Organisation/Company: CNRS
Department: Centre de Nanosciences et de Nanotechnologies
Research Field: Engineering Physics Technology
Researcher Profile: First Stage Researcher (R1)
Country: France
Application Deadline: 3 Dec 2024 - 23:59 (UTC)
Type of Contract: Temporary
Job Status: Full-time
Hours Per Week: 35
Offer Starting Date: 3 Feb 2025
Is the job funded through the EU Research Framework Programme? Horizon Europe - MSCA
Is the Job related to staff position within a Research Infrastructure? No
Offer Description To address the needs of cutting-edge applications in optical communications, it is increasingly required to develop innovative linear and nonlinear functionalities in the silicon photonics platform. The emerging photonic revolution calls for a new generation of photonic chips that provide an ever-growing number of functionalities while being smaller, cheaper, and less power-hungry. Silicon (Si) photonics is regarded as the integration and scalability paradigm. However, state-of-the-art silicon photonic components do not suffice to address the requirements of these applications. The need for new and improved functionalities is driving the research of alternative physical phenomena and materials, which are not accessible today in pure silicon technology. For example, the Pockels effect exists in silicon and is at the core of recent demonstrations of key on-chip functionalities, including high-speed and low power consumption optical modulators.
The project will focus on the integration of perovskite oxide thin films for silicon photonics. In particular, the oxide of choice is KTaNbO3 (KTN) with record high electro-optic coefficients (i.e., Pockels effect) in bulk form. The first challenge is to obtain it with the same outstanding properties in thin film form, then to integrate it into photonic test devices with low optical losses and demonstrate state-of-the-art optical modulators. The objective of the student will be to develop hybrid silicon photonic structures from thin layers provided by our partners and to demonstrate efficient optical and optoelectronic devices.
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