Junior Research Fellow - Semiconductor preparation for photoelectrochemical cells
Job Reference: Ref.09.24.54
Employer: International Iberian Nanotechnology Laboratory (INL)
Location: Braga, Portugal
Group/Unit: Salomé Research Group
Number of Vacancies: 1
Employment Type: Full time
Contract Duration: 6 months
Open Date for Applications: October 2nd, 2024
Closing Date for Applications: October 22nd, 2024, 23h00m (Lisbon Time)
Overview:
The Salomé Research Group is dedicated to developing nanofabrication and applications for optoelectronics and energy. We are looking for a qualified candidate with a Master degree to join our team in studying semiconductor interfaces under the project Kesper, with the code M-ERA-NET3/0008/2021.
SR&TD project specifications:
Name of the project: KESPER - Kesterite based Photoelectrodes for Reduction of Nitrogen to Ammonia
Reference number: M-ERA-NET 3/0008/2021
Scientific Area: Physics, Chemistry, material science, mechanical engineering
Description: Kesper addresses the development of the semiconductor kesterite to be used as a photoelectrode for Reduction of Nitrogen to Ammonia. INL's role in Kesper is mostly focused on the optimization of the kesterite interface properties and the characterization of its properties and coordination with the remaining European partners for the fabrication of a test photoelectrochemical cell.
Description of the functions and key primary responsibilities:
Develop a heterojunction formation on kesterite thin films suitable for photo-activity;
Perform advanced interface analysis;
Collaborate with the European partners;
Prepare reports, documentation, and presentations to convey project progress and outcomes.
Specific Eligibility Conditions:
Master degree in Physics, Chemistry, Nanotechnology or related fields including engineering fields;
Strong laboratory skills for experimental work, including handling chemicals, synthesizing materials, and operating specialized equipment;
Experience in semiconductor synthesis;
Know-how of electro-chemistry;
Experience with surface modification techniques, such as chemical treatments, deposition processes, and characterization methods;
Material knowledge such as understanding of semiconductor materials, for instance Kesterite-based materials and knowledge of materials used in photoelectrodes, including their properties and applications.
General Eligibility conditions, required qualifications and expertise:
Hold a MSc Degree within the field of the selected vacancy;
Be a Portuguese citizen, a European Union citizen, a non-European Union Citizen, or a stateless person with a scientific and professional curriculum that demonstrates an appropriate profile for the activity to be performed;
Fluency in English is required.
How to Apply:
The application must be in English and include the following mandatory documents:
a) Cover letter;
b) Curriculum Vitae;
c) Academic and/or Professional diplomas;
d) At least one recommendation letter;
e) Recognition of academic degrees (only academic degrees awarded by non-Portuguese higher education institutions).
Important note: Incomplete applications including the failure to provide mandatory documents or providing inaccurate information will result in the application not being considered.
Our Benefits:
Competitive salary;
Tax benefits and other Diplomatic privileges;
Private health insurance;
Family allowances (according to family situation);
Free nursery service at INL premises (subject to availability);
Support for education fees of dependent children;
Relocation support;
30 working days of annual leave.
About INL: The International Iberian Nanotechnology Laboratory – INL (http://www.inl.int), is the first and only Intergovernmental Organisation in the world entirely focused on Nanoscience and Nanotechnology.
#J-18808-Ljbffr