Organisation/Company: CNRS
Department: Institut d'électronique, de microélectronique et de nanotechnologie
Research Field: Engineering Physics Technology
Researcher Profile: First Stage Researcher (R1)
Country: France
Application Deadline: 7 Dec 2024 - 23:59 (UTC)
Type of Contract: Temporary
Job Status: Full-time
Hours Per Week: 35
Offer Starting Date: 1 Jan 2025
Is the job funded through the EU Research Framework Programme? Not funded by a EU programme
Is the Job related to staff position within a Research Infrastructure? No
Offer Description
The goal of the CDD researcher candidate will consist of fabricating semiconductor devices in the Institute's Micro-Nano Fabrication (CMNF) plant. This includes the fabrication of Double Heterojunction Bipolar Transistor (DHBT) InP/InGaAs or InP/GaAsSb on InP substrate for power amplification between 200 and 300 GHz. A characterization component will also be part of the mission, involving very high frequency and power characterization at 94 GHz and in the 200-300 GHz band, in collaboration with the LTM in Grenoble.
On an existing process, the main objective will be to optimize the technological stages of the DHBT fabrication process and to continuously participate in its development or to develop new processes, aiming to manufacture and characterize DHBT transistors with cut-off frequencies in the THz domain.
The work will be carried out within the ANODE (Advanced Nanometric Device) team of the IEMN, specializing in the production and characterization of very high frequency components, with THz applications as one of the group's specialties. The activity will primarily be centered on work in a clean room, including measurements of the devices made in the IEMN characterization unit.
The IEMN is a Joint Research Unit associating the CNRS, the University of Lille, the Polytechnic University Hauts-de-France, Centrale Lille, and ISEN JUNIA. Its equipment for the design, manufacture, and characterization of devices is at the highest European level, with around 230 permanent staff and 150 doctoral students. Research at IEMN covers a wide area from the physics of materials and nanostructures to telecommunications systems and acoustic and microwave instrumentation.
Minimum Requirements:
The candidate must have a doctoral thesis specializing in micro-nanotechnology, with knowledge of nanoscale components for microwave and THz applications. Experience with clean room device technology and successful completion of various technological steps in semiconductor device fabrication is required.
Expected Skills:
Knowledge of semiconductor physics and their applications
Knowledge of clean room fabrication
Optical and electronic lithography
Wet etching, dry etching RIE, ICP
Surface treatment
Deposition of metals and dielectrics
Additional Skills (a plus):
Characterization of III-V microwave components
DC and hyper frequency characterization from 0.5 to 750 GHz
Load-pull characterization at 94 GHz
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